Application of Amorphous Zirconium-Yttrium-Aluminum-Magnesium-Oxide Thin Film with a High Relative Dielectric Constant Prepared by Spin-Coating

Amorphous metal oxide has been a popular choice for thin film material in recent years due to its high uniformity. The dielectric layer is one of the core materials of the thin film transistor (TFT), and it affects the ability of charges storage in TFT. There is a conflict between a high relative di...

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Detalles Bibliográficos
Autores principales: Yang, Huiyun, Liang, Zhihao, Fu, Xiao, Xu, Zhuohui, Ning, Honglong, Liu, Xianzhe, Lin, Jiajing, Pan, Yaru, Yao, Rihui, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8400283/
https://www.ncbi.nlm.nih.gov/pubmed/34436371
http://dx.doi.org/10.3390/membranes11080608

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8400283/
https://www.ncbi.nlm.nih.gov/pubmed/34436371
http://dx.doi.org/10.3390/membranes11080608

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