Evaluation of Crystalline Volume Fraction of Laser-Annealed Polysilicon Thin Films Using Raman Spectroscopy and Spectroscopic Ellipsometry

We investigated the crystallinities of poly silicon (poly Si) annealed via green laser annealing (GLA) with a 532-nm pulsed laser and blue laser annealing (BLA) with 450-nm continuous-wave lasers. Three-dimensional heat transfer simulations were performed to obtain the temperature distributions in an amorphous silicon (a-Si) thin film, and GLA and BLA experiments were conducted based on the thermal simulation results. The crystallinity of annealed poly Si samples was analyzed using Raman spectroscopy and spectroscopic ellipsometry. To evaluate the degree of crystallization for the annealed samples quantitatively, the measured spectra of laser-annealed poly Si were fitted to those of crystalline Si and a-Si, and the crystal volume fraction (f(c)) of the annealed poly Si sample was determined. Both the Raman spectroscopy and ellipsometry showed consistent results on f(c). The f(c) values were found to reach >85% for optimum laser power of GLA and BLA, showing good crystallinity of the laser-annealed poly Si thin films comparable to thermal furnace annealing.