Monitoring Electrical Biasing of Pb(Zr(0.2)Ti(0.8))O(3) Ferroelectric Thin Films In Situ by DPC-STEM Imaging

Increased data storage densities are required for the next generation of nonvolatile random access memories and data storage devices based on ferroelectric materials. Yet, with intensified miniaturization, these devices face a loss of their ferroelectric properties. Therefore, a full microscopic und...

Descripción completa

Detalles Bibliográficos
Autores principales: Vogel, Alexander, Sarott, Martin F., Campanini, Marco, Trassin, Morgan, Rossell, Marta D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8400982/
https://www.ncbi.nlm.nih.gov/pubmed/34443272
http://dx.doi.org/10.3390/ma14164749

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8400982/
https://www.ncbi.nlm.nih.gov/pubmed/34443272
http://dx.doi.org/10.3390/ma14164749

Ejemplares similares