Characteristic Variabilities of Subnanometer EOT La(2)O(3) Gate Dielectric Film of Nano CMOS Devices

As CMOS devices are scaled down to a nanoscale range, characteristic variability has become a critical issue for yield and performance control of gigascale integrated circuit manufacturing. Nanoscale in size, few monolayers thick, and less thermally stable high-k interfaces all together cause more s...

Descripción completa

Detalles Bibliográficos
Autores principales: Wong, Hei, Zhang, Jieqiong, Iwai, Hiroshi, Kakushima, Kuniyuki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401052/
https://www.ncbi.nlm.nih.gov/pubmed/34443948
http://dx.doi.org/10.3390/nano11082118

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401052/
https://www.ncbi.nlm.nih.gov/pubmed/34443948
http://dx.doi.org/10.3390/nano11082118

Ejemplares similares