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Characteristic Variabilities of Subnanometer EOT La(2)O(3) Gate Dielectric Film of Nano CMOS Devices
As CMOS devices are scaled down to a nanoscale range, characteristic variability has become a critical issue for yield and performance control of gigascale integrated circuit manufacturing. Nanoscale in size, few monolayers thick, and less thermally stable high-k interfaces all together cause more s...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401052/ https://www.ncbi.nlm.nih.gov/pubmed/34443948 http://dx.doi.org/10.3390/nano11082118 |