Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

In this study, a flexible bioresistive memory with an aluminum/tussah hemolymph/indium tin oxide/polyethylene terephthalate structure is fabricated by using a natural biological material, tussah hemolymph (TH), as the active layer. When different compliance currents (Icc) are applied to the device,...

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Detalles Bibliográficos
Autores principales: Wang, Lu, Zhang, Yukai, Wen, Dianzhong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401196/
https://www.ncbi.nlm.nih.gov/pubmed/34443804
http://dx.doi.org/10.3390/nano11081973

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401196/
https://www.ncbi.nlm.nih.gov/pubmed/34443804
http://dx.doi.org/10.3390/nano11081973

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