A MEMS Fabrication Process with Thermal-Oxide Releasing Barriers and Polysilicon Sacrificial Layers for AlN Lamb-Wave Resonators to Achieve f(s)·Q(m) > 3.42 × 10(12)

This paper presents a micro-electro-mechanical systems (MEMS) processing technology for Aluminum Nitride (AlN) Lamb-wave resonators (LWRs). Two LWRs with different frequencies of 402.1 MHz and 2.097 GHz by varying the top interdigitated (IDT) periods were designed and fabricated. To avoid the shortc...

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Detalles Bibliográficos
Autores principales: Zhao, Jicong, Zhu, Zheng, Sun, Haiyan, Lv, Shitao, Wang, Xingyu, Song, Chenguang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401442/
https://www.ncbi.nlm.nih.gov/pubmed/34442514
http://dx.doi.org/10.3390/mi12080892

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401442/
https://www.ncbi.nlm.nih.gov/pubmed/34442514
http://dx.doi.org/10.3390/mi12080892

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