Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) to evaluate the radiation hardness involved with the Silicon Nitride...

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Detalles Bibliográficos
Autores principales: Yoon, Young Jun, Lee, Jae Sang, Suk, Jae Kwon, Kang, In Man, Lee, Jung Hee, Lee, Eun Je, Kim, Dong Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401769/
https://www.ncbi.nlm.nih.gov/pubmed/34442485
http://dx.doi.org/10.3390/mi12080864

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401769/
https://www.ncbi.nlm.nih.gov/pubmed/34442485
http://dx.doi.org/10.3390/mi12080864

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