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Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment
This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) to evaluate the radiation hardness involved with the Silicon Nitride...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401769/ https://www.ncbi.nlm.nih.gov/pubmed/34442485 http://dx.doi.org/10.3390/mi12080864 |
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author | Yoon, Young Jun Lee, Jae Sang Suk, Jae Kwon Kang, In Man Lee, Jung Hee Lee, Eun Je Kim, Dong Seok |
author_facet | Yoon, Young Jun Lee, Jae Sang Suk, Jae Kwon Kang, In Man Lee, Jung Hee Lee, Eun Je Kim, Dong Seok |
author_sort | Yoon, Young Jun |
collection | PubMed |
description | This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) to evaluate the radiation hardness involved with the Silicon Nitride (SiN) passivation/GaN cap interface. The impact of proton irradiation on the static and dynamic current characteristics of devices with and without pre-treatment were analyzed with 5 MeV proton irradiation. In terms of transfer characteristics before and after the proton irradiation, the drain current of the devices without and with pre-treatment were reduced by an increase in sheet and contact resistances after the proton irradiation. In contrast with the static current characteristics, the gate-lag characteristics of the device with pre-treatment were significantly degenerated. In the device with pre-treatment, the hydrogen passivation for surface states of the GaN cap was formed by the pre-treatment and SiN deposition processes. Since the hydrogen passivation was removed by the proton irradiation, the newly created vacancies resulted in the degeneration of gate-lag characteristics. After nine months in an ambient atmosphere, the gate-lag characteristics of the device with pre-treatment were recovered because of the hydrogen recombination. These results demonstrated that the radiation hardness of MIS-HEMTs was affected by the SiN/GaN interface quality. |
format | Online Article Text |
id | pubmed-8401769 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-84017692021-08-29 Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment Yoon, Young Jun Lee, Jae Sang Suk, Jae Kwon Kang, In Man Lee, Jung Hee Lee, Eun Je Kim, Dong Seok Micromachines (Basel) Article This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) to evaluate the radiation hardness involved with the Silicon Nitride (SiN) passivation/GaN cap interface. The impact of proton irradiation on the static and dynamic current characteristics of devices with and without pre-treatment were analyzed with 5 MeV proton irradiation. In terms of transfer characteristics before and after the proton irradiation, the drain current of the devices without and with pre-treatment were reduced by an increase in sheet and contact resistances after the proton irradiation. In contrast with the static current characteristics, the gate-lag characteristics of the device with pre-treatment were significantly degenerated. In the device with pre-treatment, the hydrogen passivation for surface states of the GaN cap was formed by the pre-treatment and SiN deposition processes. Since the hydrogen passivation was removed by the proton irradiation, the newly created vacancies resulted in the degeneration of gate-lag characteristics. After nine months in an ambient atmosphere, the gate-lag characteristics of the device with pre-treatment were recovered because of the hydrogen recombination. These results demonstrated that the radiation hardness of MIS-HEMTs was affected by the SiN/GaN interface quality. MDPI 2021-07-23 /pmc/articles/PMC8401769/ /pubmed/34442485 http://dx.doi.org/10.3390/mi12080864 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Yoon, Young Jun Lee, Jae Sang Suk, Jae Kwon Kang, In Man Lee, Jung Hee Lee, Eun Je Kim, Dong Seok Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment |
title | Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment |
title_full | Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment |
title_fullStr | Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment |
title_full_unstemmed | Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment |
title_short | Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment |
title_sort | effects of proton irradiation on the current characteristics of sin-passivated algan/gan mis-hemts using a tmah-based surface pre-treatment |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8401769/ https://www.ncbi.nlm.nih.gov/pubmed/34442485 http://dx.doi.org/10.3390/mi12080864 |
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