Homogeneous versus Inhomogeneous Polarization Switching in PZT Thin Films: Impact of the Structural Quality and Correlation to the Negative Capacitance Effect

Polarization switching in ferroelectric films is exploited in many applications, such as non-volatile memories and negative capacitance field affect transistors. This can be inhomogeneous or homogeneous, depending on if ferroelectric domains are forming or not during the switching process. The relat...

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Detalles Bibliográficos
Autores principales: Pintilie, Lucian, Boni, Georgia Andra, Chirila, Cristina Florentina, Stancu, Viorica, Trupina, Lucian, Istrate, Cosmin Marian, Radu, Cristian, Pintilie, Ioana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8402043/
https://www.ncbi.nlm.nih.gov/pubmed/34443956
http://dx.doi.org/10.3390/nano11082124

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8402043/
https://www.ncbi.nlm.nih.gov/pubmed/34443956
http://dx.doi.org/10.3390/nano11082124

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