Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK) facility, with terrestrial neutrons. The neutron...

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Detalles Bibliográficos
Autores principales: Principato, Fabio, Allegra, Giuseppe, Cappello, Corrado, Crepel, Olivier, Nicosia, Nicola, D′Arrigo, Salvatore, Cantarella, Vincenzo, Di Mauro, Alessandro, Abbene, Leonardo, Mirabello, Marcello, Pintacuda, Francesco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8402584/
https://www.ncbi.nlm.nih.gov/pubmed/34451067
http://dx.doi.org/10.3390/s21165627

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8402584/
https://www.ncbi.nlm.nih.gov/pubmed/34451067
http://dx.doi.org/10.3390/s21165627

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