The Evolution of Organosilicon Precursors for Low-k Interlayer Dielectric Fabrication Driven by Integration Challenges

Since the application of silicon materials in electronic devices in the 1950s, microprocessors are continuously getting smaller, faster, smarter, and larger in data storage capacity. One important factor that makes progress possible is decreasing the dielectric constant of the insulating layer withi...

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Detalles Bibliográficos
Autores principales: Hong, Nianmin, Zhang, Yinong, Sun, Quan, Fan, Wenjie, Li, Menglu, Xie, Meng, Fu, Wenxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8432693/
https://www.ncbi.nlm.nih.gov/pubmed/34500915
http://dx.doi.org/10.3390/ma14174827

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8432693/
https://www.ncbi.nlm.nih.gov/pubmed/34500915
http://dx.doi.org/10.3390/ma14174827

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