Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics

In this paper, the effect of ultraviolet (UV) irradiation on the static characteristics of high voltage 4H-SiC PiN is investigated. No significant change is observed in the forward on state characteristic of 4H-SiC PiN diodes before and after ultraviolet light irradiation. However, it is found that...

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Detalles Bibliográficos
Autores principales: Xu, Xingliang, Zhang, Lin, Dong, Peng, Li, Zhiqiang, Li, Lianghui, Li, Juntao, Zhang, Jian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433280/
https://www.ncbi.nlm.nih.gov/pubmed/34508306
http://dx.doi.org/10.1186/s11671-021-03601-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433280/
https://www.ncbi.nlm.nih.gov/pubmed/34508306
http://dx.doi.org/10.1186/s11671-021-03601-3

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