Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics

In this paper, the effect of ultraviolet (UV) irradiation on the static characteristics of high voltage 4H-SiC PiN is investigated. No significant change is observed in the forward on state characteristic of 4H-SiC PiN diodes before and after ultraviolet light irradiation. However, it is found that...

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Autores principales: Xu, Xingliang, Zhang, Lin, Dong, Peng, Li, Zhiqiang, Li, Lianghui, Li, Juntao, Zhang, Jian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2021
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433280/
https://www.ncbi.nlm.nih.gov/pubmed/34508306
http://dx.doi.org/10.1186/s11671-021-03601-3
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author Xu, Xingliang
Zhang, Lin
Dong, Peng
Li, Zhiqiang
Li, Lianghui
Li, Juntao
Zhang, Jian
author_facet Xu, Xingliang
Zhang, Lin
Dong, Peng
Li, Zhiqiang
Li, Lianghui
Li, Juntao
Zhang, Jian
author_sort Xu, Xingliang
collection PubMed
description In this paper, the effect of ultraviolet (UV) irradiation on the static characteristics of high voltage 4H-SiC PiN is investigated. No significant change is observed in the forward on state characteristic of 4H-SiC PiN diodes before and after ultraviolet light irradiation. However, it is found that the blocking voltage is significantly increased with UV irradiation, which is resulted from the depletion region width extension with the collection of positive charges under the increase of the surface negative charge density. The deep level transient spectroscopy reveals that the UV irradiation induced deep-level defects play a dominant role over the trapped negative charges, and therefore leads to the increase of blocking voltage of 4H-SiC PiN Diodes.
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spelling pubmed-84332802021-09-13 Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics Xu, Xingliang Zhang, Lin Dong, Peng Li, Zhiqiang Li, Lianghui Li, Juntao Zhang, Jian Nanoscale Res Lett Nano Express In this paper, the effect of ultraviolet (UV) irradiation on the static characteristics of high voltage 4H-SiC PiN is investigated. No significant change is observed in the forward on state characteristic of 4H-SiC PiN diodes before and after ultraviolet light irradiation. However, it is found that the blocking voltage is significantly increased with UV irradiation, which is resulted from the depletion region width extension with the collection of positive charges under the increase of the surface negative charge density. The deep level transient spectroscopy reveals that the UV irradiation induced deep-level defects play a dominant role over the trapped negative charges, and therefore leads to the increase of blocking voltage of 4H-SiC PiN Diodes. Springer US 2021-09-10 /pmc/articles/PMC8433280/ /pubmed/34508306 http://dx.doi.org/10.1186/s11671-021-03601-3 Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Nano Express
Xu, Xingliang
Zhang, Lin
Dong, Peng
Li, Zhiqiang
Li, Lianghui
Li, Juntao
Zhang, Jian
Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics
title Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics
title_full Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics
title_fullStr Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics
title_full_unstemmed Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics
title_short Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics
title_sort effect of ultraviolet irradiation on 4h-sic pin diodes characteristics
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433280/
https://www.ncbi.nlm.nih.gov/pubmed/34508306
http://dx.doi.org/10.1186/s11671-021-03601-3
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