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Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography
The current progress of system miniaturization relies extensively on the development of 3D machining techniques to increase the areal structure density. In this work, a wafer-scale out-of-plane 3D silicon (Si) shaping technology is reported, which combines a multistep plasma etching process with cor...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433478/ https://www.ncbi.nlm.nih.gov/pubmed/34567640 http://dx.doi.org/10.1038/s41378-020-0134-6 |
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author | Ni, Shu Berenschot, Erwin J. W. Westerik, Pieter J. de Boer, Meint J. Wolf, René Le-The, Hai Gardeniers, Han J. G. E. Tas, Niels R. |
author_facet | Ni, Shu Berenschot, Erwin J. W. Westerik, Pieter J. de Boer, Meint J. Wolf, René Le-The, Hai Gardeniers, Han J. G. E. Tas, Niels R. |
author_sort | Ni, Shu |
collection | PubMed |
description | The current progress of system miniaturization relies extensively on the development of 3D machining techniques to increase the areal structure density. In this work, a wafer-scale out-of-plane 3D silicon (Si) shaping technology is reported, which combines a multistep plasma etching process with corner lithography. The multistep plasma etching procedure results in high aspect ratio structures with stacked semicircles etched deep into the sidewall and thereby introduces corners with a proper geometry for the subsequent corner lithography. Due to the geometrical contrast between the gaps and sidewall, residues are left only inside the gaps and form an inversion mask inside the semicircles. Using this mask, octahedra and donuts can be etched in a repeated manner into Si over the full wafer area, which demonstrates the potential of this technology for constructing high-density 3D structures with good dimensional control in the bulk of Si wafers. |
format | Online Article Text |
id | pubmed-8433478 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-84334782021-09-24 Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography Ni, Shu Berenschot, Erwin J. W. Westerik, Pieter J. de Boer, Meint J. Wolf, René Le-The, Hai Gardeniers, Han J. G. E. Tas, Niels R. Microsyst Nanoeng Article The current progress of system miniaturization relies extensively on the development of 3D machining techniques to increase the areal structure density. In this work, a wafer-scale out-of-plane 3D silicon (Si) shaping technology is reported, which combines a multistep plasma etching process with corner lithography. The multistep plasma etching procedure results in high aspect ratio structures with stacked semicircles etched deep into the sidewall and thereby introduces corners with a proper geometry for the subsequent corner lithography. Due to the geometrical contrast between the gaps and sidewall, residues are left only inside the gaps and form an inversion mask inside the semicircles. Using this mask, octahedra and donuts can be etched in a repeated manner into Si over the full wafer area, which demonstrates the potential of this technology for constructing high-density 3D structures with good dimensional control in the bulk of Si wafers. Nature Publishing Group UK 2020-03-23 /pmc/articles/PMC8433478/ /pubmed/34567640 http://dx.doi.org/10.1038/s41378-020-0134-6 Text en © The Author(s) 2020 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Ni, Shu Berenschot, Erwin J. W. Westerik, Pieter J. de Boer, Meint J. Wolf, René Le-The, Hai Gardeniers, Han J. G. E. Tas, Niels R. Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography |
title | Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography |
title_full | Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography |
title_fullStr | Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography |
title_full_unstemmed | Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography |
title_short | Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography |
title_sort | wafer-scale 3d shaping of high aspect ratio structures by multistep plasma etching and corner lithography |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433478/ https://www.ncbi.nlm.nih.gov/pubmed/34567640 http://dx.doi.org/10.1038/s41378-020-0134-6 |
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