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Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography

The current progress of system miniaturization relies extensively on the development of 3D machining techniques to increase the areal structure density. In this work, a wafer-scale out-of-plane 3D silicon (Si) shaping technology is reported, which combines a multistep plasma etching process with cor...

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Autores principales: Ni, Shu, Berenschot, Erwin J. W., Westerik, Pieter J., de Boer, Meint J., Wolf, René, Le-The, Hai, Gardeniers, Han J. G. E., Tas, Niels R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433478/
https://www.ncbi.nlm.nih.gov/pubmed/34567640
http://dx.doi.org/10.1038/s41378-020-0134-6
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author Ni, Shu
Berenschot, Erwin J. W.
Westerik, Pieter J.
de Boer, Meint J.
Wolf, René
Le-The, Hai
Gardeniers, Han J. G. E.
Tas, Niels R.
author_facet Ni, Shu
Berenschot, Erwin J. W.
Westerik, Pieter J.
de Boer, Meint J.
Wolf, René
Le-The, Hai
Gardeniers, Han J. G. E.
Tas, Niels R.
author_sort Ni, Shu
collection PubMed
description The current progress of system miniaturization relies extensively on the development of 3D machining techniques to increase the areal structure density. In this work, a wafer-scale out-of-plane 3D silicon (Si) shaping technology is reported, which combines a multistep plasma etching process with corner lithography. The multistep plasma etching procedure results in high aspect ratio structures with stacked semicircles etched deep into the sidewall and thereby introduces corners with a proper geometry for the subsequent corner lithography. Due to the geometrical contrast between the gaps and sidewall, residues are left only inside the gaps and form an inversion mask inside the semicircles. Using this mask, octahedra and donuts can be etched in a repeated manner into Si over the full wafer area, which demonstrates the potential of this technology for constructing high-density 3D structures with good dimensional control in the bulk of Si wafers.
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spelling pubmed-84334782021-09-24 Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography Ni, Shu Berenschot, Erwin J. W. Westerik, Pieter J. de Boer, Meint J. Wolf, René Le-The, Hai Gardeniers, Han J. G. E. Tas, Niels R. Microsyst Nanoeng Article The current progress of system miniaturization relies extensively on the development of 3D machining techniques to increase the areal structure density. In this work, a wafer-scale out-of-plane 3D silicon (Si) shaping technology is reported, which combines a multistep plasma etching process with corner lithography. The multistep plasma etching procedure results in high aspect ratio structures with stacked semicircles etched deep into the sidewall and thereby introduces corners with a proper geometry for the subsequent corner lithography. Due to the geometrical contrast between the gaps and sidewall, residues are left only inside the gaps and form an inversion mask inside the semicircles. Using this mask, octahedra and donuts can be etched in a repeated manner into Si over the full wafer area, which demonstrates the potential of this technology for constructing high-density 3D structures with good dimensional control in the bulk of Si wafers. Nature Publishing Group UK 2020-03-23 /pmc/articles/PMC8433478/ /pubmed/34567640 http://dx.doi.org/10.1038/s41378-020-0134-6 Text en © The Author(s) 2020 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Ni, Shu
Berenschot, Erwin J. W.
Westerik, Pieter J.
de Boer, Meint J.
Wolf, René
Le-The, Hai
Gardeniers, Han J. G. E.
Tas, Niels R.
Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography
title Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography
title_full Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography
title_fullStr Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography
title_full_unstemmed Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography
title_short Wafer-scale 3D shaping of high aspect ratio structures by multistep plasma etching and corner lithography
title_sort wafer-scale 3d shaping of high aspect ratio structures by multistep plasma etching and corner lithography
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8433478/
https://www.ncbi.nlm.nih.gov/pubmed/34567640
http://dx.doi.org/10.1038/s41378-020-0134-6
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