Characterization of SiO(2) Etching Profiles in Pulse-Modulated Capacitively Coupled Plasmas

Although pulse-modulated plasma has overcome various problems encountered during the development of the high aspect ratio contact hole etching process, there is still a lack of understanding in terms of precisely how the pulse-modulated plasma solves the issues. In this research, to gain insight int...

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Detalles Bibliográficos
Autores principales: Cho, Chulhee, You, Kwangho, Kim, Sijun, Lee, Youngseok, Lee, Jangjae, You, Shinjae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8434144/
https://www.ncbi.nlm.nih.gov/pubmed/34501123
http://dx.doi.org/10.3390/ma14175036

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8434144/
https://www.ncbi.nlm.nih.gov/pubmed/34501123
http://dx.doi.org/10.3390/ma14175036

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