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Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing
Si single crystal was implanted with 230 keV He(+) ions to a fluence of 5 × 10(16)/cm(2) at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8434436/ https://www.ncbi.nlm.nih.gov/pubmed/34501194 http://dx.doi.org/10.3390/ma14175107 |