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Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

Si single crystal was implanted with 230 keV He(+) ions to a fluence of 5 × 10(16)/cm(2) at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (...

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Detalles Bibliográficos
Autores principales:	Yang, Zhen, Zou, Zhiping, Zhang, Zeyang, Xing, Yubo, Wang, Tao
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8434436/ https://www.ncbi.nlm.nih.gov/pubmed/34501194 http://dx.doi.org/10.3390/ma14175107

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