Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation

The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the...

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Detalles Bibliográficos
Autores principales: Lebedev, Alexander A., Kozlovski, Vitali V., Davydovskaya, Klavdia S., Levinshtein, Mikhail E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8434482/
https://www.ncbi.nlm.nih.gov/pubmed/34501066
http://dx.doi.org/10.3390/ma14174976

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8434482/
https://www.ncbi.nlm.nih.gov/pubmed/34501066
http://dx.doi.org/10.3390/ma14174976

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