Strain-controlled synthesis of ultrathin hexagonal GaTe/MoS(2) heterostructure for sensitive photodetection

Ultrathin hexagonal GaTe, with relatively high charge density, holds great potential in the field of optoelectronic devices. However, the thermodynamical stability limits it fabrications as well as applications. Here, by introducing two-dimensional MoS(2) as the substrate, we successfully realized t...

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Detalles Bibliográficos
Autores principales: Li, Fang, Chen, Mingxing, Wang, Yajuan, Zhu, Xiaoli, Zhang, Xuehong, Zou, Zixing, Zhang, Danliang, Yi, Jiali, Li, Ziwei, Li, Dong, Pan, Anlian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8437799/
https://www.ncbi.nlm.nih.gov/pubmed/34541467
http://dx.doi.org/10.1016/j.isci.2021.103031

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8437799/
https://www.ncbi.nlm.nih.gov/pubmed/34541467
http://dx.doi.org/10.1016/j.isci.2021.103031

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