Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention

Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical met...

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Detalles Bibliográficos
Autores principales: Zhang, Yuting, Poddar, Swapnadeep, Huang, He, Gu, Leilei, Zhang, Qianpeng, Zhou, Yu, Yan, Shuai, Zhang, Sifan, Song, Zhitang, Huang, Baoling, Shen, Guozhen, Fan, Zhiyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2021
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8442916/
https://www.ncbi.nlm.nih.gov/pubmed/34516897
http://dx.doi.org/10.1126/sciadv.abg3788

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8442916/
https://www.ncbi.nlm.nih.gov/pubmed/34516897
http://dx.doi.org/10.1126/sciadv.abg3788

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