Cargando…

Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention

Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical met...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhang, Yuting, Poddar, Swapnadeep, Huang, He, Gu, Leilei, Zhang, Qianpeng, Zhou, Yu, Yan, Shuai, Zhang, Sifan, Song, Zhitang, Huang, Baoling, Shen, Guozhen, Fan, Zhiyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8442916/
https://www.ncbi.nlm.nih.gov/pubmed/34516897
http://dx.doi.org/10.1126/sciadv.abg3788
_version_ 1783753091846242304
author Zhang, Yuting
Poddar, Swapnadeep
Huang, He
Gu, Leilei
Zhang, Qianpeng
Zhou, Yu
Yan, Shuai
Zhang, Sifan
Song, Zhitang
Huang, Baoling
Shen, Guozhen
Fan, Zhiyong
author_facet Zhang, Yuting
Poddar, Swapnadeep
Huang, He
Gu, Leilei
Zhang, Qianpeng
Zhou, Yu
Yan, Shuai
Zhang, Sifan
Song, Zhitang
Huang, Baoling
Shen, Guozhen
Fan, Zhiyong
author_sort Zhang, Yuting
collection PubMed
description Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX(3); X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI(3) and ~7 × 10(9) s ultralong extrapolated retention time for polycrystalline MAPbCl(3) NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI(3) to MAPbCl(3), culminating in the trade-off between the device switching speed and retention time.
format Online
Article
Text
id pubmed-8442916
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher American Association for the Advancement of Science
record_format MEDLINE/PubMed
spelling pubmed-84429162021-09-24 Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention Zhang, Yuting Poddar, Swapnadeep Huang, He Gu, Leilei Zhang, Qianpeng Zhou, Yu Yan, Shuai Zhang, Sifan Song, Zhitang Huang, Baoling Shen, Guozhen Fan, Zhiyong Sci Adv Physical and Materials Sciences Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX(3); X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI(3) and ~7 × 10(9) s ultralong extrapolated retention time for polycrystalline MAPbCl(3) NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI(3) to MAPbCl(3), culminating in the trade-off between the device switching speed and retention time. American Association for the Advancement of Science 2021-09-03 /pmc/articles/PMC8442916/ /pubmed/34516897 http://dx.doi.org/10.1126/sciadv.abg3788 Text en Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). https://creativecommons.org/licenses/by-nc/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (https://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
spellingShingle Physical and Materials Sciences
Zhang, Yuting
Poddar, Swapnadeep
Huang, He
Gu, Leilei
Zhang, Qianpeng
Zhou, Yu
Yan, Shuai
Zhang, Sifan
Song, Zhitang
Huang, Baoling
Shen, Guozhen
Fan, Zhiyong
Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention
title Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention
title_full Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention
title_fullStr Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention
title_full_unstemmed Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention
title_short Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention
title_sort three-dimensional perovskite nanowire array–based ultrafast resistive ram with ultralong data retention
topic Physical and Materials Sciences
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8442916/
https://www.ncbi.nlm.nih.gov/pubmed/34516897
http://dx.doi.org/10.1126/sciadv.abg3788
work_keys_str_mv AT zhangyuting threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention
AT poddarswapnadeep threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention
AT huanghe threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention
AT guleilei threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention
AT zhangqianpeng threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention
AT zhouyu threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention
AT yanshuai threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention
AT zhangsifan threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention
AT songzhitang threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention
AT huangbaoling threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention
AT shenguozhen threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention
AT fanzhiyong threedimensionalperovskitenanowirearraybasedultrafastresistiveramwithultralongdataretention