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Three-dimensional perovskite nanowire array–based ultrafast resistive RAM with ultralong data retention
Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical met...
Autores principales: | Zhang, Yuting, Poddar, Swapnadeep, Huang, He, Gu, Leilei, Zhang, Qianpeng, Zhou, Yu, Yan, Shuai, Zhang, Sifan, Song, Zhitang, Huang, Baoling, Shen, Guozhen, Fan, Zhiyong |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8442916/ https://www.ncbi.nlm.nih.gov/pubmed/34516897 http://dx.doi.org/10.1126/sciadv.abg3788 |
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