Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 10(20) cm(−3)

Gallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the performance of vertical GaN power devices necessary for high-vo...

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Detalles Bibliográficos
Autores principales: Agulto, Verdad C., Iwamoto, Toshiyuki, Kitahara, Hideaki, Toya, Kazuhiro, Mag-usara, Valynn Katrine, Imanishi, Masayuki, Mori, Yusuke, Yoshimura, Masashi, Nakajima, Makoto
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8443745/
https://www.ncbi.nlm.nih.gov/pubmed/34526558
http://dx.doi.org/10.1038/s41598-021-97253-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8443745/
https://www.ncbi.nlm.nih.gov/pubmed/34526558
http://dx.doi.org/10.1038/s41598-021-97253-z

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