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Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 10(20) cm(−3)
Gallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the performance of vertical GaN power devices necessary for high-vo...
| Autores principales: | , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8443745/ https://www.ncbi.nlm.nih.gov/pubmed/34526558 http://dx.doi.org/10.1038/s41598-021-97253-z |