Demonstration of valley anisotropy utilized to enhance the thermoelectric power factor

Valley anisotropy is a favorable electronic structure feature that could be utilized for good thermoelectric performance. Here, taking advantage of the single anisotropic Fermi pocket in p-type Mg(3)Sb(2), a feasible strategy utilizing the valley anisotropy to enhance the thermoelectric power factor...

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Detalles Bibliográficos
Autores principales: Li, Airan, Hu, Chaoliang, He, Bin, Yao, Mengyu, Fu, Chenguang, Wang, Yuechu, Zhao, Xinbing, Felser, Claudia, Zhu, Tiejun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8448840/
https://www.ncbi.nlm.nih.gov/pubmed/34535648
http://dx.doi.org/10.1038/s41467-021-25722-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8448840/
https://www.ncbi.nlm.nih.gov/pubmed/34535648
http://dx.doi.org/10.1038/s41467-021-25722-0

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