Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges

In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I–V characteristics, memory window, and operation were analyzed using a commercial technology comp...

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Detalles Bibliográficos
Autores principales: Yang, Yejin, Park, Young-Soo, Son, Jaemin, Cho, Kyoungah, Kim, Sangsig
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8452620/
https://www.ncbi.nlm.nih.gov/pubmed/34545175
http://dx.doi.org/10.1038/s41598-021-98182-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8452620/
https://www.ncbi.nlm.nih.gov/pubmed/34545175
http://dx.doi.org/10.1038/s41598-021-98182-7

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