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Simulation studies on electrical characteristics of silicon nanowire feedback field-effect transistors with interface trap charges
In this study, we examine the electrical characteristics of silicon nanowire feedback field-effect transistors (FBFETs) with interface trap charges between the channel and gate oxide. The band diagram, I–V characteristics, memory window, and operation were analyzed using a commercial technology comp...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8452620/ https://www.ncbi.nlm.nih.gov/pubmed/34545175 http://dx.doi.org/10.1038/s41598-021-98182-7 |