Detecting halfmetallic electronic structures of spintronic materials in a magnetic field

Band-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the operando c...

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Detalles Bibliográficos
Autores principales: Fujiwara, H., Umetsu, R. Y., Kuroda, F., Miyawaki, J., Kashiuchi, T., Nishimoto, K., Nagai, K., Sekiyama, A., Irizawa, A., Takeda, Y., Saitoh, Y., Oguchi, T., Harada, Y., Suga, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8452713/
https://www.ncbi.nlm.nih.gov/pubmed/34545160
http://dx.doi.org/10.1038/s41598-021-97992-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8452713/
https://www.ncbi.nlm.nih.gov/pubmed/34545160
http://dx.doi.org/10.1038/s41598-021-97992-z

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