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Detecting halfmetallic electronic structures of spintronic materials in a magnetic field

Band-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the operando c...

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Autores principales: Fujiwara, H., Umetsu, R. Y., Kuroda, F., Miyawaki, J., Kashiuchi, T., Nishimoto, K., Nagai, K., Sekiyama, A., Irizawa, A., Takeda, Y., Saitoh, Y., Oguchi, T., Harada, Y., Suga, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8452713/
https://www.ncbi.nlm.nih.gov/pubmed/34545160
http://dx.doi.org/10.1038/s41598-021-97992-z
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author Fujiwara, H.
Umetsu, R. Y.
Kuroda, F.
Miyawaki, J.
Kashiuchi, T.
Nishimoto, K.
Nagai, K.
Sekiyama, A.
Irizawa, A.
Takeda, Y.
Saitoh, Y.
Oguchi, T.
Harada, Y.
Suga, S.
author_facet Fujiwara, H.
Umetsu, R. Y.
Kuroda, F.
Miyawaki, J.
Kashiuchi, T.
Nishimoto, K.
Nagai, K.
Sekiyama, A.
Irizawa, A.
Takeda, Y.
Saitoh, Y.
Oguchi, T.
Harada, Y.
Suga, S.
author_sort Fujiwara, H.
collection PubMed
description Band-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the operando conditions by applying magnetic and/or electric fields. Here we present an advanced spectroscopic technique to probe the spin-polarized electronic structures by using magnetic circular dichroism (MCD) in resonant inelastic soft X-ray scattering (RIXS) under an external magnetic field. Thanks to the spin-selective dipole-allowed transitions in RIXS-MCD, we have successfully demonstrated the direct evidence of the perfectly spin-polarized electronic structures for the prototypical halfmetallic Heusller alloy [Formula: see text] . RIXS-MCD is a promising tool to probe the spin-dependent carriers and band-gap induced in the buried magnetic layers in an element specific way under the operando conditions.
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spelling pubmed-84527132021-09-22 Detecting halfmetallic electronic structures of spintronic materials in a magnetic field Fujiwara, H. Umetsu, R. Y. Kuroda, F. Miyawaki, J. Kashiuchi, T. Nishimoto, K. Nagai, K. Sekiyama, A. Irizawa, A. Takeda, Y. Saitoh, Y. Oguchi, T. Harada, Y. Suga, S. Sci Rep Article Band-gap engineering is one of the fundamental techniques in semiconductor technology and also applicable in next generation spintronics using the spin degree of freedom. To fully utilize the spintronic materials, it is essential to optimize the spin-dependent electronic structures in the operando conditions by applying magnetic and/or electric fields. Here we present an advanced spectroscopic technique to probe the spin-polarized electronic structures by using magnetic circular dichroism (MCD) in resonant inelastic soft X-ray scattering (RIXS) under an external magnetic field. Thanks to the spin-selective dipole-allowed transitions in RIXS-MCD, we have successfully demonstrated the direct evidence of the perfectly spin-polarized electronic structures for the prototypical halfmetallic Heusller alloy [Formula: see text] . RIXS-MCD is a promising tool to probe the spin-dependent carriers and band-gap induced in the buried magnetic layers in an element specific way under the operando conditions. Nature Publishing Group UK 2021-09-20 /pmc/articles/PMC8452713/ /pubmed/34545160 http://dx.doi.org/10.1038/s41598-021-97992-z Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Fujiwara, H.
Umetsu, R. Y.
Kuroda, F.
Miyawaki, J.
Kashiuchi, T.
Nishimoto, K.
Nagai, K.
Sekiyama, A.
Irizawa, A.
Takeda, Y.
Saitoh, Y.
Oguchi, T.
Harada, Y.
Suga, S.
Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
title Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
title_full Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
title_fullStr Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
title_full_unstemmed Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
title_short Detecting halfmetallic electronic structures of spintronic materials in a magnetic field
title_sort detecting halfmetallic electronic structures of spintronic materials in a magnetic field
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8452713/
https://www.ncbi.nlm.nih.gov/pubmed/34545160
http://dx.doi.org/10.1038/s41598-021-97992-z
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