Indirect bandgap, optoelectronic properties, and photoelectrochemical characteristics of high-purity Ta(3)N(5) photoelectrodes

The (opto)electronic properties of Ta(3)N(5) photoelectrodes are often dominated by defects, such as oxygen impurities, nitrogen vacancies, and low-valent Ta cations, impeding fundamental studies of its electronic structure, chemical stability, and photocarrier transport. Here, we explore the role o...

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Detalles Bibliográficos
Autores principales: Eichhorn, Johanna, Lechner, Simon P., Jiang, Chang-Ming, Folchi Heunecke, Giulia, Munnik, Frans, Sharp, Ian D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8454490/
https://www.ncbi.nlm.nih.gov/pubmed/34671478
http://dx.doi.org/10.1039/d1ta05282a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8454490/
https://www.ncbi.nlm.nih.gov/pubmed/34671478
http://dx.doi.org/10.1039/d1ta05282a

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