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Indirect bandgap, optoelectronic properties, and photoelectrochemical characteristics of high-purity Ta(3)N(5) photoelectrodes
The (opto)electronic properties of Ta(3)N(5) photoelectrodes are often dominated by defects, such as oxygen impurities, nitrogen vacancies, and low-valent Ta cations, impeding fundamental studies of its electronic structure, chemical stability, and photocarrier transport. Here, we explore the role o...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8454490/ https://www.ncbi.nlm.nih.gov/pubmed/34671478 http://dx.doi.org/10.1039/d1ta05282a |