Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments

The development of three-dimensional architectures in semiconductor technology is paving the way to new device concepts for various applications, from quantum computing to single photon avalanche detectors. In most cases, such structures are achievable only under far-from-equilibrium growth conditio...

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Detalles Bibliográficos
Autores principales: Albani, Marco, Bergamaschini, Roberto, Barzaghi, Andrea, Salvalaglio, Marco, Valente, Joao, Paul, Douglas J., Voigt, Axel, Isella, Giovanni, Montalenti, Francesco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8458435/
https://www.ncbi.nlm.nih.gov/pubmed/34552147
http://dx.doi.org/10.1038/s41598-021-98285-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8458435/
https://www.ncbi.nlm.nih.gov/pubmed/34552147
http://dx.doi.org/10.1038/s41598-021-98285-1

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