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High-Throughput Calculations on the Decomposition Reactions of Off-Stoichiometry GeSbTe Alloys for Embedded Memories

Chalcogenide GeSbTe (GST) alloys are exploited as phase change materials in a variety of applications ranging from electronic non-volatile memories to neuromorphic and photonic devices. In most applications, the prototypical Ge [Formula: see text] Sb [Formula: see text] Te [Formula: see text] compou...

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Detalles Bibliográficos
Autores principales: Abou El Kheir, Omar, Bernasconi, Marco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8464663/
https://www.ncbi.nlm.nih.gov/pubmed/34578698
http://dx.doi.org/10.3390/nano11092382