High-Throughput Calculations on the Decomposition Reactions of Off-Stoichiometry GeSbTe Alloys for Embedded Memories

Chalcogenide GeSbTe (GST) alloys are exploited as phase change materials in a variety of applications ranging from electronic non-volatile memories to neuromorphic and photonic devices. In most applications, the prototypical Ge [Formula: see text] Sb [Formula: see text] Te [Formula: see text] compound along the GeTe-Sb [Formula: see text] Te [Formula: see text] pseudobinary line is used. Ge-rich GST alloys, off the pseudobinary tie-line with a crystallization temperature higher than that of Ge [Formula: see text] Sb [Formula: see text] Te [Formula: see text] , are currently explored for embedded phase-change memories of interest for automotive applications. During crystallization, Ge-rich GST alloys undergo a phase separation into pure Ge and less Ge-rich alloys. The detailed mechanisms underlying this transformation are, however, largely unknown. In this work, we performed high-throughput calculations based on Density Functional Theory (DFT) to uncover the most favorable decomposition pathways of Ge-rich GST alloys. The knowledge of the DFT formation energy of all GST alloys in the central part of the Ge-Sb-Te ternary phase diagram allowed us to identify the cubic crystalline phases that are more likely to form during the crystallization of a generic GST alloy. This scheme is exemplified by drawing a decomposition map for alloys on the Ge-Ge [Formula: see text] Sb [Formula: see text] Te [Formula: see text] tie-line. A map of decomposition propensity is also constructed, which suggests a possible strategy to minimize phase separation by still keeping a high crystallization temperature.