Preparation and Research of Monolayer WS(2) FETs Encapsulated by h-BN Material

Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively combine the properties of single component materials, and the strong interlayer coupling effect can change their electronic and optical properties. According to our research, WS(2)/h-BN vertical vdWs h...

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Detalles Bibliográficos
Autores principales: Han, Tao, Liu, Hongxia, Chen, Shupeng, Wang, Shulong, Yang, Kun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8464811/
https://www.ncbi.nlm.nih.gov/pubmed/34577650
http://dx.doi.org/10.3390/mi12091006

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8464811/
https://www.ncbi.nlm.nih.gov/pubmed/34577650
http://dx.doi.org/10.3390/mi12091006

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