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Preparation and Research of Monolayer WS(2) FETs Encapsulated by h-BN Material
Functional devices that use vertical van der Waals (vdWs) heterostructure material can effectively combine the properties of single component materials, and the strong interlayer coupling effect can change their electronic and optical properties. According to our research, WS(2)/h-BN vertical vdWs h...
Autores principales: | Han, Tao, Liu, Hongxia, Chen, Shupeng, Wang, Shulong, Yang, Kun |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8464811/ https://www.ncbi.nlm.nih.gov/pubmed/34577650 http://dx.doi.org/10.3390/mi12091006 |
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