Effect of Heat Treatments under High Isostatic Pressure on the Transport Critical Current Density at 4.2 K and 20 K in Doped and Undoped MgB(2) Wires

Annealing undoped MgB(2) wires under high isostatic pressure (HIP) increases transport critical current density (J(tc)) by 10% at 4.2 K in range magnetic fields from 4 T to 12 T and significantly increases J(tc) by 25% in range magnetic fields from 2 T to 4 T and does not increase J(tc) above 4 T at...

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Detalles Bibliográficos
Autores principales: Gajda, Daniel, Zaleski, Andrzej J., Morawski, Andrzej J., Małecka, Malgorzata, Nenkov, Konstantin, Rindfleisch, Matt, Hossain, Md Shahriar A., Czujko, Tomasz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8464888/
https://www.ncbi.nlm.nih.gov/pubmed/34576377
http://dx.doi.org/10.3390/ma14185152

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8464888/
https://www.ncbi.nlm.nih.gov/pubmed/34576377
http://dx.doi.org/10.3390/ma14185152

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