Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method

The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end...

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Detalles Bibliográficos
Autores principales: Tang, Huansong, Lu, Kuankuan, Xu, Zhuohui, Ning, Honglong, Yao, Dengming, Fu, Xiao, Yang, Huiyun, Luo, Dongxiang, Yao, Rihui, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8465624/
https://www.ncbi.nlm.nih.gov/pubmed/34577688
http://dx.doi.org/10.3390/mi12091044

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8465624/
https://www.ncbi.nlm.nih.gov/pubmed/34577688
http://dx.doi.org/10.3390/mi12091044

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