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Effect of Sputtering Oxygen Partial Pressure on the Praseodymium-Doped InZnO Thin Film Transistor Using Microwave Photoconductivity Decay Method
The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evaluation methods need to be carried out after the end...
Autores principales: | Tang, Huansong, Lu, Kuankuan, Xu, Zhuohui, Ning, Honglong, Yao, Dengming, Fu, Xiao, Yang, Huiyun, Luo, Dongxiang, Yao, Rihui, Peng, Junbiao |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8465624/ https://www.ncbi.nlm.nih.gov/pubmed/34577688 http://dx.doi.org/10.3390/mi12091044 |
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