Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

In this paper, we described a method of double-sided diffusion and drift of lithium-ions into monocrystalline silicon for the formation of the large-sized, p-i-n structured Si(Li) radiation detectors. The p-i-n structure is a p-n junction with a doped region, where the “i-region” is between the n an...

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Detalles Bibliográficos
Autores principales: Saymbetov, Ahmet, Muminov, Ramizulla, Japashov, Nursultan, Toshmurodov, Yorkin, Nurgaliyev, Madiyar, Koshkarbay, Nursultan, Kuttybay, Nurzhigit, Zholamanov, Batyrbek, Jing, Zhang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8465731/
https://www.ncbi.nlm.nih.gov/pubmed/34576398
http://dx.doi.org/10.3390/ma14185174

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8465731/
https://www.ncbi.nlm.nih.gov/pubmed/34576398
http://dx.doi.org/10.3390/ma14185174

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