Cargando…
Oxygen Concentration Effect on Conductive Bridge Random Access Memory of InWZnO Thin Film
In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film can be fabricated with different oxygen concentrati...
| Autores principales: | , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8466751/ https://www.ncbi.nlm.nih.gov/pubmed/34578520 http://dx.doi.org/10.3390/nano11092204 |