Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements. We investigated the impact of different thermal treatments on the work function and li...

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Detalles Bibliográficos
Autores principales: Ramesh, Sivaramakrishnan, Ajaykumar, Arjun, Ragnarsson, Lars-Åke, Breuil, Laurent, El Hajjam, Gabriel Khalil, Kaczer, Ben, Belmonte, Attilio, Nyns, Laura, Soulié, Jean-Philippe, Van den bosch, Geert, Rosmeulen, Maarten
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8467353/
https://www.ncbi.nlm.nih.gov/pubmed/34577727
http://dx.doi.org/10.3390/mi12091084

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8467353/
https://www.ncbi.nlm.nih.gov/pubmed/34577727
http://dx.doi.org/10.3390/mi12091084

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