Cargando…

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

We studied the metal gate work function of different metal electrode and high-k dielectric combinations by monitoring the flat band voltage shift with dielectric thicknesses using capacitance–voltage measurements. We investigated the impact of different thermal treatments on the work function and li...

Descripción completa

Detalles Bibliográficos
Autores principales:	Ramesh, Sivaramakrishnan, Ajaykumar, Arjun, Ragnarsson, Lars-Åke, Breuil, Laurent, El Hajjam, Gabriel Khalil, Kaczer, Ben, Belmonte, Attilio, Nyns, Laura, Soulié, Jean-Philippe, Van den bosch, Geert, Rosmeulen, Maarten
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8467353/ https://www.ncbi.nlm.nih.gov/pubmed/34577727 http://dx.doi.org/10.3390/mi12091084

Ejemplares similares

Self-Adaption of the GIDL Erase Promotes Stacking More Layers in 3D NAND Flash
por: Yang, Tao, et al.
Publicado: (2023)

NAND flash memory technologies
por: Aritome, Seiichi
Publicado: (2016)

Investigation of Erase Cycling Induced Joint Dummy Cell Disturbance in Dual-Deck 3D NAND Flash Memory
por: You, Kaikai, et al.
Publicado: (2023)

An SVM-Based NAND Flash Endurance Prediction Method
por: Zhang, Haichun, et al.
Publicado: (2021)

Random Telegraph Noise in 3D NAND Flash Memories
por: Spinelli, Alessandro S., et al.
Publicado: (2021)

Recent Progress of Ferroelectric-Gate Field-Effect Transistors and Applications to Nonvolatile Logic and FeNAND Flash Memory
por: Sakai, Shigeki, et al.
Publicado: (2010)

Investigation of the Connection Schemes between Decks in 3D NAND Flash
por: Jia, Jianquan, et al.
Publicado: (2023)

Channel Modeling and Quantization Design for 3D NAND Flash Memory
por: Wang, Cheng, et al.
Publicado: (2023)

A reconfigurable NAND/NOR genetic logic gate
por: Goñi-Moreno, Angel, et al.
Publicado: (2012)

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage
por: Yu, Xinyue, et al.
Publicado: (2022)

Compression-Assisted Adaptive ECC and RAID Scattering for NAND Flash Storage Devices
por: Lim, Seung-Ho, et al.
Publicado: (2020)

Artificial Neural Network Assisted Error Correction for MLC NAND Flash Memory
por: He, Ruiquan, et al.
Publicado: (2021)

Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference
por: Yi, Su-in, et al.
Publicado: (2021)

Memcapacitor Crossbar Array with Charge Trap NAND Flash Structure for Neuromorphic Computing
por: Hwang, Sungmin, et al.
Publicado: (2023)

Cascadable all-optical NAND gates using diffractive networks
por: Luo, Yi, et al.
Publicado: (2022)

Neuromorphic Computing Using NAND Flash Memory Architecture With Pulse Width Modulation Scheme
por: Lee, Sung-Tae, et al.
Publicado: (2020)

A Scalable Bidimensional Randomization Scheme for TLC 3D NAND Flash Memories
por: Favalli, Michele, et al.
Publicado: (2021)

Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory
por: Go, Donghyun, et al.
Publicado: (2023)

Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories
por: Chen, Fei, et al.
Publicado: (2021)

A Novel Program Scheme for Z-Interference Improvement in 3D NAND Flash Memory
por: Jia, Jianquan, et al.
Publicado: (2023)

ReHypar: A Recursive Hybrid Chunk Partitioning Method Using NAND-Flash Memory SSD
por: No, Jaechun, et al.
Publicado: (2014)

Dielectric Engineering to Suppress Cell-to-Cell Programming Voltage Interference in 3D NAND Flash Memory
por: Jung, Woo-Jin, et al.
Publicado: (2021)

Investigation of Program Efficiency Overshoot in 3D Vertical Channel NAND Flash with Randomly Distributed Traps
por: Park, Chanyang, et al.
Publicado: (2023)

Adaptive Bitline Voltage Countermeasure for Neighbor Wordline Interference in 3D NAND Flash Memory-Based Sensors
por: Fan, Hanshui, et al.
Publicado: (2023)

Asymmetric Programming: A Highly Reliable Metadata Allocation Strategy for MLC NAND Flash Memory-Based Sensor Systems
por: Huang, Min, et al.
Publicado: (2014)

CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory
por: Kim, Min-Kyu, et al.
Publicado: (2021)

Erase que erase -- : cuentos
por: Massieu, Cuca
Publicado: (1982)

A Flexible Hybrid BCH Decoder for Modern NAND Flash Memories Using General Purpose Graphical Processing Units (GPGPUs)
por: Subbiah, Arul, et al.
Publicado: (2019)

Activation Enhancement and Grain Size Improvement for Poly-Si Channel Vertical Transistor by Laser Thermal Annealing in 3D NAND Flash
por: Yang, Tao, et al.
Publicado: (2023)

Multi-channel router and logic NAND gate from multiple Autler–Townes splitting controlled by phase transition
por: Raza, Faizan, et al.
Publicado: (2020)

Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging
por: Resetar, Tomislav, et al.
Publicado: (2016)

Erasing Institutional Bias
por: Jana, Tiffany
Publicado: (2018)

Cause of Death among Long-Term Cancer Survivors: The NANDE Study
por: Fujii, Makoto, et al.
Publicado: (2023)

Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider V(th) Window in 3D NAND Flash Using a Machine-Learning Method
por: Nam, Kihoon, et al.
Publicado: (2022)

Erasion Versus Excision in Childhood; or, the Remote Effects of Excising or Erasing Tuberculous Joints in Children
por: Maylard, A. Ernest
Publicado: (1899)

Erase una vez México /
por: Molina Arceo, Sandra
Publicado: (2014)

Multicolor and Erasable DNA Photolithography
por: Huang, Fujian, et al.
Publicado: (2014)

Brain Implants to Erase Memories
por: Glannon, Walter
Publicado: (2017)

Numerical Study on the Laser Annealing of Silicon Used in Advanced V-NAND Device
por: Son, Yeong-Il, et al.
Publicado: (2022)

Érase una vez : concurso de cuento infantil
Publicado: (2003)

Cannot write session to /tmp/vufind_sessions/sess_462orq350f16qqtpqnuc5k0r5a