Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Multilevel storage and the continuing scaling down of technology have significantly improved the storage density of phase change memory, but have also brought about a challenge, in that data reliability can degrade due to the resistance drift. To ensure data reliability, many read and write operatio...

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Detalles Bibliográficos
Autores principales: Lv, Yi, Wang, Qian, Chen, Houpeng, Xie, Chenchen, Ni, Shenglan, Li, Xi, Song, Zhitang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8467895/
https://www.ncbi.nlm.nih.gov/pubmed/34577728
http://dx.doi.org/10.3390/mi12091085

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8467895/
https://www.ncbi.nlm.nih.gov/pubmed/34577728
http://dx.doi.org/10.3390/mi12091085

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