Cargando…

Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure

Multilevel storage and the continuing scaling down of technology have significantly improved the storage density of phase change memory, but have also brought about a challenge, in that data reliability can degrade due to the resistance drift. To ensure data reliability, many read and write operatio...

Descripción completa

Detalles Bibliográficos
Autores principales:	Lv, Yi, Wang, Qian, Chen, Houpeng, Xie, Chenchen, Ni, Shenglan, Li, Xi, Song, Zhitang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8467895/ https://www.ncbi.nlm.nih.gov/pubmed/34577728 http://dx.doi.org/10.3390/mi12091085

Ejemplares similares

Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses
por: Xie, Chenchen, et al.
Publicado: (2019)

A High-Precision Implementation of the Sigmoid Activation Function for Computing-in-Memory Architecture
por: Xu, Siqiu, et al.
Publicado: (2021)

An Output-Capacitorless Low-Dropout Regulator with Slew-Rate Enhancement
por: Ni, Shenglan, et al.
Publicado: (2022)

Post-silicon nano-electronic device and its application in brain-inspired chips
por: Lv, Yi, et al.
Publicado: (2022)

A Fast-Transient-Response NMOS LDO with Wide Load-Capacitance Range for Cross-Point Memory
por: He, Luchang, et al.
Publicado: (2022)

A Fully Integrated Low-Dropout Regulator with Improved Load Regulation and Transient Responses
por: Hu, Chenkai, et al.
Publicado: (2022)

A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature Compensation
por: Chen, Zhizhi, et al.
Publicado: (2023)

Ta-Doped Sb(2)Te Allows Ultrafast Phase-Change Memory with Excellent High-Temperature Operation Characteristics
por: Xue, Yuan, et al.
Publicado: (2021)

Nanoscale Phase Change Material Array by Sub-Resolution Assist Feature for Storage Class Memory Application
por: Zhang, Jiarui, et al.
Publicado: (2023)

Pulse-modulated multilevel data storage in an organic ferroelectric resistive memory diode
por: Lee, Jiyoul, et al.
Publicado: (2016)

Atomic scale insight into the effects of Aluminum doped Sb(2)Te for phase change memory application
por: Wang, Yong, et al.
Publicado: (2018)

Pt Modified Sb(2)Te(3) Alloy Ensuring High−Performance Phase Change Memory
por: Qiao, Yang, et al.
Publicado: (2022)

Nonvolatile multilevel data storage memory device from controlled ambipolar charge trapping mechanism
por: Zhou, Ye, et al.
Publicado: (2013)

Criticality enhances the multilevel reliability of stimulus responses in cortical neural networks
por: Liang, Junhao, et al.
Publicado: (2022)

Performance improvement of phase-change memory cell using AlSb(3)Te and atomic layer deposition TiO(2) buffer layer
por: Song, Sannian, et al.
Publicado: (2013)

Balancing the Lifetime and Storage Overhead on Error Correction for Phase Change Memory
por: An, Ning, et al.
Publicado: (2015)

Low-Energy Amorphization of Ti(1)Sb(2)Te(5) Phase Change Alloy Induced by TiTe(2) Nano-Lamellae
por: Ding, Keyuan, et al.
Publicado: (2016)

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes
por: Wang, Lu, et al.
Publicado: (2021)

Multilevel storage and photoinduced-reset memory by an inorganic perovskite quantum-dot/polystyrene floating-gate organic transistor
por: Jin, Risheng, et al.
Publicado: (2020)

Advantages of Ta-Doped Sb(3)Te(1) Materials for Phase Change Memory Applications
por: Shao, Mingyue, et al.
Publicado: (2023)

Light-activated Multilevel Resistive Switching Storage in Pt/Cs(2)AgBiBr(6)/ITO/Glass Devices
por: Zhong, Tingting, et al.
Publicado: (2021)

A multilevel nonvolatile magnetoelectric memory
por: Shen, Jianxin, et al.
Publicado: (2016)

Multilevel information storage using magnetoelastic layer stacks
por: Pattnaik, D. P., et al.
Publicado: (2019)

Phase change memory: device physics, reliability and applications
por: Redaelli, Andrea
Publicado: (2017)

Scandium doping brings speed improvement in Sb(2)Te alloy for phase change random access memory application
por: Chen, Xin, et al.
Publicado: (2018)

Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge(2)Sb(2)Te(5)
por: Han, Jeong Hwa, et al.
Publicado: (2021)

Correction to: Light-Activated Multilevel Resistive Switching Storage in Pt/Cs(2)AgBiBr(6)/ITO/Glass Devices
por: Zhong, Tingting, et al.
Publicado: (2022)

Storage and reliability of electricity
por: Glasby, Edward T
Publicado: (2011)

Noise in Neurons and Synapses Enables Reliable Associative Memory Storage in Local Cortical Circuits
por: Zhang, Chi, et al.
Publicado: (2021)

Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO(2)/Al(2)O(3)-Based Charge Trapping Layers
por: Spassov, Dencho, et al.
Publicado: (2022)

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
por: Zahoor, Furqan, et al.
Publicado: (2020)

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage
por: Yu, Xinyue, et al.
Publicado: (2022)

Multilevel modeling using R
por: Finch, W Holmes, et al.
Publicado: (2019)

Relating Measurement Invariance, Cross-Level Invariance, and Multilevel Reliability
por: Jak, Suzanne, et al.
Publicado: (2017)

Largely enhanced luminescence intensity and improved optical temperature sensing properties in CaWO(4)–La(2)(WO(4))(3): Er(3+), Yb(3+) via regulating cations composition
por: Zhang, Ying, et al.
Publicado: (2020)

Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction
por: Patil, Harshada, et al.
Publicado: (2021)

Multilevel regulation of anthocyanin-promoting R2R3-MYB transcription factors in plants
por: Yang, Jianfei, et al.
Publicado: (2022)

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS(2) Van der Waals Heterostructure
por: Wen, Jialing, et al.
Publicado: (2021)

ATLAS Solutions for Phase 2 Storage and Networking
por: Le Goff, Fabrice
Publicado: (2019)

Thickness-Dependent Crystallization of Ultrathin Antimony Thin Films for Monatomic Multilevel Reflectance and Phase Change Memory Designs
por: Yimam, Daniel T., et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_mlnj4s3imi9a8ovjs396s809cn