Stress Impact of the Annealing Procedure of Cu-Filled TSV Packaging on the Performance of Nano-Scaled MOSFETs Evaluated by an Analytical Solution and FEA-Based Submodeling Technique

Stress-induced performance change in electron packaging architecture is a major concern when the keep-out zone (KOZ) and corresponding integration density of interconnect systems and transistor devices are considered. In this study, a finite element analysis (FEA)-based submodeling approach is demon...

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Detalles Bibliográficos
Autores principales: Huang, Pei-Chen, Lee, Chang-Chun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8472814/
https://www.ncbi.nlm.nih.gov/pubmed/34576449
http://dx.doi.org/10.3390/ma14185226

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8472814/
https://www.ncbi.nlm.nih.gov/pubmed/34576449
http://dx.doi.org/10.3390/ma14185226

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