Composite Memristors by Nanoscale Modification of Hf/Ta Anodic Oxides

[Image: see text] Composite memristors based on anodic oxidation of Hf superimposed on Ta thin films are studied. A layered structure is obtained by successive sputtering of Ta and Hf thin films. The deposition geometry ensured components’ thickness gradient profiles (wedges) aligned in opposite directions. Anodization in citrate buffer electrolyte leads to a nanoscale columnar structuring of Ta(2)O(5) in HfO(2) due to the higher electrical resistance of the latter. Following the less resistive path, the ionic current forces Ta oxide to locally grow toward the electrolyte interface according to the Rayleigh–Taylor principle. The obtained composite oxide memristive properties are studied as a function of the Hf/Ta thickness ratio. One pronounced zone prominent for memristive applications is found for ratios between 4 and 5. Here, unipolar and bipolar memristors are found, with remarkable endurance and retention capabilities. This is discussed in the frame of conductive filament formation preferentially along the interfaces between oxides.