Electrically doped SiGe-heterojunction TFET based biosensor considering non-ideal hybridization issues: a simulation study

Calibrated simulations are used to study a dielectric modulated, electrically doped, dual metal gate, SiGe heterojunction, double gate TFET biosensor in this work. Use of lower bandgap SiGe at the source side helps in improving the ON current of the biosensor. Electric doping is preferred over physi...

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Detalles Bibliográficos
Autores principales: Dewan, Basudha, Chaudhary, Shalini, Yadav, Menka
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Berlin Heidelberg 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8475436/
https://www.ncbi.nlm.nih.gov/pubmed/34602753
http://dx.doi.org/10.1007/s00339-021-04933-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8475436/
https://www.ncbi.nlm.nih.gov/pubmed/34602753
http://dx.doi.org/10.1007/s00339-021-04933-8

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