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Electrically doped SiGe-heterojunction TFET based biosensor considering non-ideal hybridization issues: a simulation study
Calibrated simulations are used to study a dielectric modulated, electrically doped, dual metal gate, SiGe heterojunction, double gate TFET biosensor in this work. Use of lower bandgap SiGe at the source side helps in improving the ON current of the biosensor. Electric doping is preferred over physi...
Autores principales: | Dewan, Basudha, Chaudhary, Shalini, Yadav, Menka |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer Berlin Heidelberg
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8475436/ https://www.ncbi.nlm.nih.gov/pubmed/34602753 http://dx.doi.org/10.1007/s00339-021-04933-8 |
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